FDN359BN mosfet equivalent, n-channel logic level powertrench mosfet.
* 2.7 A, 30 V.
RDS(ON)= 0.046 Ω @ VGS = 10 V
RDS(ON)= 0.060 Ω @ VGS = 4.5 V
* Very fast switching speed.
* Low gate charge (5nC typical)
* High perfor.
where low in-line power loss and fast switching are required.
Features
* 2.7 A, 30 V.
RDS(ON)= 0.046 Ω @ VGS = 10 .
This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well sui.
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